Gallium is already on its way to becoming the workhorse of the solar tech field, and now it looks like the soft metal is is on track to become a thoroughbred. A team of US scientists has hit upon an improved method for growing indium gallium nitride (InGaN) crystals that could lead to record-breaking solar cell efficiency. So far the method has resulted in a film of InGaN that has “almost ideal characteristics.” To ice the cake, an analysis of the film revealed the precise reason why the results of the new InGaN growing method were so good, which could lead to further improvements in LED technology as well as solar cells. A Perfect InGaN Crystal -Nitride refers to a compound of nitrogen, in this case in conjunction with indium, a soft silvery-white, zinc-like metal, as well as gallium.
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